Manufacturer Part Number
IXFN55N50
Manufacturer
IXYS Corporation
Introduction
High-performance MOSFET transistor designed for power electronics applications
Product Features and Performance
N-channel MOSFET structure
500V drain-source voltage (Vdss)
55A continuous drain current (Id) at 25°C
90mΩ maximum on-resistance (Rds(on)) at 27.5A, 10V
9400pF maximum input capacitance (Ciss) at 25V
625W maximum power dissipation at Tc
Wide operating temperature range of -55°C to 150°C
Product Advantages
Exceptional power handling and efficiency
Low on-resistance for reduced conduction losses
High voltage rating for use in high-voltage applications
Compact SOT-227B package for space-constrained designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 90mΩ @ 27.5A, 10V
Continuous Drain Current (Id): 55A @ 25°C
Input Capacitance (Ciss): 9400pF @ 25V
Power Dissipation (Tc): 625W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Power converters
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and space-saving package design
Reliable and robust performance
Broad operating temperature range
Compatibility with various power electronics applications
