IXFN55N50 - IXYS

Manufacturer Part Number

IXFN55N50

Manufacturer

IXYS Corporation

Introduction

High-performance MOSFET transistor designed for power electronics applications

Product Features and Performance

N-channel MOSFET structure

500V drain-source voltage (Vdss)

55A continuous drain current (Id) at 25°C

90mΩ maximum on-resistance (Rds(on)) at 27.5A, 10V

9400pF maximum input capacitance (Ciss) at 25V

625W maximum power dissipation at Tc

Wide operating temperature range of -55°C to 150°C

Product Advantages

Exceptional power handling and efficiency

Low on-resistance for reduced conduction losses

High voltage rating for use in high-voltage applications

Compact SOT-227B package for space-constrained designs

Key Technical Parameters

Drain-Source Voltage (Vdss): 500V

Gate-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 90mΩ @ 27.5A, 10V

Continuous Drain Current (Id): 55A @ 25°C

Input Capacitance (Ciss): 9400pF @ 25V

Power Dissipation (Tc): 625W

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power electronics applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Power converters

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent power handling and efficiency

Compact and space-saving package design

Reliable and robust performance

Broad operating temperature range

Compatibility with various power electronics applications