SMUN5211DW1T1G - onsemi

Manufacturer Part Number

SMUN5211DW1T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors Bipolar (BJT) Arrays, Pre-Biased

Product Features and Performance

Automotive, AEC-Q101 qualified

2 NPN Pre-Biased (Dual) Transistor

Low Collector-Emitter Saturation Voltage

High DC Current Gain

Product Advantages

Suitable for automotive and industrial applications

Compact surface mount package

High reliability and performance

Key Technical Parameters

Power Max: 187mW

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V

Resistor Base (R1): 10kOhms

Resistor Emitter Base (R2): 10kOhms

Quality and Safety Features

RoHS3 Compliant

AEC-Q101 qualified for automotive applications

Compatibility

6-TSSOP, SC-88, SOT-363 package

Tape & Reel (TR) packaging

Application Areas

Automotive electronics

Industrial control systems

General purpose switching applications

Product Lifecycle

This product is currently in production and available.

Replacement or upgrade options may be available in the future.

Several Key Reasons to Choose This Product

Automotive and industrial grade reliability

Compact surface mount package

High performance with low saturation voltage and high current gain

Suitable for a wide range of switching applications