SMUN5112DW1T1G - onsemi

Manufacturer Part Number

SMUN5112DW1T1G

Manufacturer

onsemi

Introduction

Dual PNP pre-biased transistor array in a compact package

Product Features and Performance

Two pre-biased PNP transistors in a single package

Provides space-saving and power-efficient solutions

Optimized for low-power, battery-operated applications

High collector-emitter breakdown voltage of 50V

Low collector cutoff current of 500nA

Low collector-emitter saturation voltage of 250mV

Product Advantages

Compact package for space-saving design

Pre-biased transistors simplify circuit design

Optimized for low-power operation

Excellent electrical characteristics

Key Technical Parameters

Power rating: 250mW

Collector-emitter breakdown voltage: 50V

Collector current: 100mA

Collector cutoff current: 500nA

Collector-emitter saturation voltage: 250mV

DC current gain: 60 minimum

Quality and Safety Features

RoHS3 compliant

Suitable for reflow soldering

Compatibility

Compatible with a variety of electronic circuits and applications

Application Areas

Portable electronics

Battery-powered devices

Analog and mixed-signal circuits

Low-power amplifiers and switches

Product Lifecycle

Currently in production

Replacement or upgraded models may be available in the future

Key Reasons to Choose This Product

Compact, space-saving design

Excellent electrical performance for low-power applications

Pre-biased transistors simplify circuit design

Reliable and RoHS-compliant construction

Suitable for a wide range of electronic applications