Manufacturer Part Number
SMUN5111T1G
Manufacturer
onsemi
Introduction
PNP Pre-Biased Bipolar Junction Transistor (BJT)
Product Features and Performance
High voltage capability up to 50V
High collector current up to 100mA
Low collector-emitter saturation voltage
Wide operating temperature range
Pre-biased base-emitter junction
Product Advantages
Optimized for automotive and industrial applications
Reliable performance in harsh environments
Compact surface mount package
Easy to integrate into circuit designs
Key Technical Parameters
Power Rating: 202mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current (Max): 100mA
Collector Cutoff Current: 500nA
Collector-Emitter Saturation Voltage: 250mV @ 10mA
DC Current Gain: 35 @ 5mA, 10V
Base Resistor: 10kΩ
Emitter-Base Resistor: 10kΩ
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Surface mount SC-70-3 (SOT323) package
Suitable for various industrial and automotive applications
Application Areas
Automotive electronics
Industrial control systems
Power supply circuits
General-purpose amplification and switching
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Reliable performance in harsh environments
Compact and easy to integrate surface mount package
Optimized for automotive and industrial applications
Wide operating voltage and current ranges
Pre-biased base-emitter junction for simplified circuit design