SMUN5133T1G - onsemi

Manufacturer Part Number

SMUN5133T1G

Manufacturer

onsemi

Introduction

Pre-biased PNP bipolar junction transistor (BJT) in a surface mount package.

Product Features and Performance

202 mW maximum power rating

50 V maximum collector-emitter breakdown voltage

100 mA maximum collector current

500 nA maximum collector cutoff current

250 mV maximum collector-emitter saturation voltage @ 10 mA collector current

Minimum DC current gain of 80 @ 5 mA collector current, 10 V collector-emitter voltage

7 kOhm base resistor

47 kOhm emitter-base resistor

Product Advantages

Pre-biased design for simplified circuit implementation

Surface mount packaging for compact PCB layouts

Optimized performance for common transistor applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V

Resistor Base (R1): 4.7 kOhms

Resistor Emitter Base (R2): 47 kOhms

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount (SMD) package: SC-70-3 (SOT323)

Application Areas

Common transistor applications in electronic circuits

Product Lifecycle

Active and available

Several Key Reasons to Choose This Product

Pre-biased design for simplified circuit implementation

Surface mount packaging for compact PCB layouts

Optimized performance characteristics for common transistor applications

RoHS3 compliant for environmentally conscious designs

Readily available and actively supported by the manufacturer