Manufacturer Part Number
SMUN5113DW1T1G
Manufacturer
onsemi
Introduction
The SMUN5113DW1T1G is a dual PNP pre-biased transistor array from onsemi, designed for use in electronic circuits and applications.
Product Features and Performance
Dual PNP pre-biased transistor array
Optimized for small-signal switching and amplification applications
Low collector-emitter saturation voltage (Vce(sat)) for efficient operation
High DC current gain (hFE) for improved performance
Product Advantages
Compact surface mount package
Pre-biased design simplifies circuit design
Reliable and stable performance
Suitable for a wide range of electronic applications
Key Technical Parameters
Power Rating: 187mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current (Max): 100mA
Collector Cutoff Current: 500nA
Vce Saturation Voltage: 250mV @ 300μA, 10mA
DC Current Gain (hFE): 80 @ 5mA, 10V
Base Resistor: 47kΩ
Emitter-Base Resistor: 47kΩ
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Surface mount packaging: SC-88/SC70-6/SOT-363
Compatible with a wide range of electronic circuits and applications
Application Areas
Small-signal switching and amplification
Electronic circuits and systems
Consumer electronics
Industrial automation
Telecommunications equipment
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Optimized performance for small-signal applications
Compact and efficient surface mount package
Reliable and stable operation
Simplified circuit design with pre-biased configuration
Compatibility with a wide range of electronic applications