SMUN2216T1G - onsemi

Manufacturer Part Number

SMUN2216T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single, Pre-Biased

Product Features and Performance

230 mW Power Dissipation

50 V Collector-Emitter Breakdown Voltage

100 mA Collector Current

500 nA Collector Cutoff Current

250 mV Collector-Emitter Saturation Voltage @ 1 mA, 10 mA

160 DC Current Gain @ 5 mA, 10 V

10 kOhms Base Resistor

Product Advantages

Pre-Biased for simplified biasing

Small package size (TO-236-3, SC-59, SOT-23-3)

Surface mount design

Key Technical Parameters

Power Dissipation: 230 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 100 mA

Collector Cutoff Current: 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 1 mA, 10 mA

DC Current Gain: 160 @ 5 mA, 10 V

Base Resistor: 10 kOhms

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount (SC-59 package)

Application Areas

General-purpose amplifier and switching applications

Product Lifecycle

No information on discontinuation or replacements/upgrades

Key Reasons to Choose This Product

Pre-biased for simplified design

Small and compact surface mount package

Suitable for general-purpose amplifier and switching applications

RoHS3 compliant for environmental safety