SMUN5111DW1T1G - onsemi

Manufacturer Part Number

SMUN5111DW1T1G

Manufacturer

onsemi

Introduction

Dual PNP Bipolar Junction Transistor (BJT) Array

Product Features and Performance

Dual PNP transistors in a single package

Optimized for automotive and industrial applications

Low collector-emitter saturation voltage (Vce(sat))

Low collector cutoff current (ICBO)

Wide operating temperature range of -55°C to 150°C

Product Advantages

Compact and space-saving design

High reliability and ruggedness for demanding applications

Excellent electrical characteristics for efficient performance

Suitable for various automotive and industrial uses

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V

Power Max: 385mW

Operating Temperature: -55°C ~ 150°C (TJ)

Quality and Safety Features

RoHS3 compliant

Automotive-grade AEC-Q101 qualified

Compatibility

6-TSSOP, SC-88, SOT-363 package

Suitable for surface mount applications

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Switching and amplification circuits

Product Lifecycle

Current production

Replacements and upgrades available

Key Reasons to Choose

High reliability and ruggedness for demanding applications

Excellent electrical characteristics for efficient performance

Wide operating temperature range for diverse use cases

Compact and space-saving design

Automotive-grade quality and safety certification