Manufacturer Part Number
SMUN5113T1G
Manufacturer
onsemi
Introduction
The SMUN5113T1G is a pre-biased PNP bipolar junction transistor (BJT) in a surface mount SC-70-3 (SOT323) package.
Product Features and Performance
Designed for medium power amplification and switching applications
Optimized for low noise and high gain
Excellent current and temperature stability
Fast switching speed
Product Advantages
Pre-biased for easy implementation in circuits
Compact surface mount package
Low power consumption
Robust and reliable performance
Key Technical Parameters
Power rating: 202 mW
Collector-emitter breakdown voltage: 50 V
Collector current (max): 100 mA
Collector cutoff current (max): 500 nA
Collector-emitter saturation voltage: 250 mV @ 10 mA, 300 μA
DC current gain (hFE): 80 min @ 5 mA, 10 V
Base resistors: 47 kΩ
Quality and Safety Features
RoHS3 compliant
Reliable construction and design
Compatibility
Suitable for a wide range of electronic circuits and applications
Application Areas
Medium power amplification
Switching applications
General-purpose transistor circuits
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Pre-biased design for easy implementation
Compact surface mount package
Excellent electrical performance and stability
Robust and reliable construction
Suitable for a variety of applications