Manufacturer Part Number
SMUN2211T1G
Manufacturer
onsemi
Introduction
SMUN2211T1G is a pre-biased NPN bipolar junction transistor (BJT) designed for use in automotive and industrial applications.
Product Features and Performance
High voltage rating of up to 50V collector-emitter breakdown voltage
Low collector-emitter saturation voltage of 250mV @ 10mA
Collector current rating of up to 100mA
Guaranteed minimum DC current gain (hFE) of 35 at 5mA, 10V
Built-in base and emitter resistors of 10kΩ each
Product Advantages
Simplifies circuit design with pre-biased configuration
Robust automotive-grade performance and reliability
Compact surface-mount package
Key Technical Parameters
Power rating: 230mW
Collector-emitter breakdown voltage: 50V
Collector current: 100mA
Collector cutoff current: 500nA
DC current gain: 35 (min) @ 5mA, 10V
Base and emitter resistors: 10kΩ each
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Surface-mount TO-236-3 (SC-59, SOT-23-3) package
Suitable for automated assembly
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Signal conditioning applications
Product Lifecycle
Current production part, not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Simplified design with built-in biasing resistors
Robust automotive-grade performance and reliability
Small surface-mount package for compact design
Wide voltage and current handling capabilities
RoHS3 compliance for environmentally-friendly use