SMUN5114T1G - onsemi

Manufacturer Part Number

SMUN5114T1G

Manufacturer

onsemi

Introduction

Pre-biased PNP bipolar junction transistor (BJT)

Product Features and Performance

Optimized for low-power, high-speed switching applications

Low collector-emitter saturation voltage

High DC current gain

Built-in base-emitter resistors

Product Advantages

Compact SC-70 surface-mount package

Simplified circuit design and component count

Improved reliability and reduced power consumption

Key Technical Parameters

Power rating: 202 mW

Collector-emitter breakdown voltage: 50 V

Collector current: 100 mA

Collector cutoff current: 500 nA

Base-emitter saturation voltage: 250 mV

DC current gain: 80 (minimum)

Base resistor: 10 kΩ

Emitter-base resistor: 47 kΩ

Quality and Safety Features

RoHS3 compliant

Reliable SC-70 surface-mount packaging

Compatibility

Suitable for a wide range of low-power, high-speed switching applications

Application Areas

Power management circuits

Logic gates

Amplifier circuits

Switch circuits

Product Lifecycle

Currently in production

No discontinuation or replacement plans known

Key Reasons to Choose This Product

Optimized for low-power, high-speed switching applications

Simplified circuit design with built-in resistors

Compact and reliable SC-70 surface-mount package

Excellent electrical characteristics, including low saturation voltage and high current gain

RoHS3 compliance for environmental safety