Manufacturer Part Number
SMUN5211T1G
Manufacturer
onsemi
Introduction
The SMUN5211T1G is a pre-biased NPN bipolar junction transistor (BJT) in a SC-70 (SOT-323) package, designed for automotive and industrial applications.
Product Features and Performance
Pre-biased NPN BJT
50V collector-emitter breakdown voltage
100mA maximum collector current
202mW maximum power dissipation
35 minimum DC current gain at 5mA, 10V
10kΩ base and emitter-base resistors
Product Advantages
Pre-biased design simplifies circuit design
Automotive-grade AEC-Q101 qualification
Small SC-70 (SOT-323) footprint
Tape and reel packaging for automated assembly
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 50V
Collector Current (Max): 100mA
Power Dissipation: 202mW
DC Current Gain (hFE): 35 (min) @ 5mA, 10V
Base and Emitter-Base Resistors: 10kΩ
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for use in automotive, industrial, and consumer electronics applications
Application Areas
Automotive electronics
Industrial control systems
General-purpose amplifier and switching circuits
Product Lifecycle
Current production, no plans for discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose This Product
Automotive-grade quality and reliability
Pre-biased design simplifies circuit implementation
Small footprint for space-constrained applications
Tape and reel packaging for efficient automated assembly
Broad compatibility across various application areas