SMUN5211T1G - onsemi

Manufacturer Part Number

SMUN5211T1G

Manufacturer

onsemi

Introduction

The SMUN5211T1G is a pre-biased NPN bipolar junction transistor (BJT) in a SC-70 (SOT-323) package, designed for automotive and industrial applications.

Product Features and Performance

Pre-biased NPN BJT

50V collector-emitter breakdown voltage

100mA maximum collector current

202mW maximum power dissipation

35 minimum DC current gain at 5mA, 10V

10kΩ base and emitter-base resistors

Product Advantages

Pre-biased design simplifies circuit design

Automotive-grade AEC-Q101 qualification

Small SC-70 (SOT-323) footprint

Tape and reel packaging for automated assembly

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Power Dissipation: 202mW

DC Current Gain (hFE): 35 (min) @ 5mA, 10V

Base and Emitter-Base Resistors: 10kΩ

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Suitable for use in automotive, industrial, and consumer electronics applications

Application Areas

Automotive electronics

Industrial control systems

General-purpose amplifier and switching circuits

Product Lifecycle

Current production, no plans for discontinuation

Replacements and upgrades available as needed

Key Reasons to Choose This Product

Automotive-grade quality and reliability

Pre-biased design simplifies circuit implementation

Small footprint for space-constrained applications

Tape and reel packaging for efficient automated assembly

Broad compatibility across various application areas