SMUN5214T1G - onsemi

Manufacturer Part Number

SMUN5214T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single, Pre-Biased

Product Features and Performance

Power Rating: 202 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 300 μA, 10 mA

DC Current Gain (hFE): 80 min. @ 5 mA, 10 V

Base Resistor: 10 kΩ

Emitter-Base Resistor: 47 kΩ

Product Advantages

Pre-Biased for simplified circuit design

Small surface mount package (SC-70, SOT-323)

Suitable for low-power applications

Key Technical Parameters

Transistor Type: NPN, Pre-Biased

Packaging: SC-70-3 (SOT323), Tape and Reel

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount

Application Areas

Low-power amplifiers

Switching circuits

Bias circuits

Product Lifecycle

Current product, no discontinuation planned

Replacement or upgrade options available

Key Reasons to Choose

Pre-biased design for simplified circuit implementation

Small footprint surface mount package

Suitable for a variety of low-power applications

RoHS3 compliance for environmental sustainability