SMUN5232DW1T1G - onsemi

Manufacturer Part Number

SMUN5232DW1T1G

Manufacturer

onsemi

Introduction

Pre-biased dual NPN transistor array in a small 6-pin SC-88/SOT-363 package

Product Features and Performance

Two NPN transistors with pre-biased base-emitter junctions

Low collector-emitter saturation voltage

High collector-emitter breakdown voltage

Low collector cutoff current

Guaranteed DC current gain

Product Advantages

Space-saving 6-pin package

Pre-biased for simplified circuit design

High voltage and current handling capabilities

Key Technical Parameters

Collector-Emitter Breakdown Voltage (max): 50V

Collector Current (max): 100mA

Collector Cutoff Current (max): 500nA

DC Current Gain (min): 15 @ 5mA, 10V

Base Resistor: 4.7kΩ

Emitter-Base Resistor: 4.7kΩ

Quality and Safety Features

RoHS3 compliant

Manufactured in an ISO-certified facility

Compatibility

Compatible with standard surface mount assembly processes

Suitable for a variety of analog and digital circuit applications

Application Areas

General-purpose amplification and switching

Logic-level translation

Driver circuits

Product Lifecycle

This product is currently in active production

Replacement or upgrade options are available if needed

Key Reasons to Choose This Product

Compact 6-pin package for space-limited designs

Integrated pre-biasing simplifies circuit design

Robust performance characteristics for reliable operation

RoHS compliance for use in environmentally-conscious applications

Supported by onsemi's global manufacturing and technical expertise