SMUN5235DW1T1G - onsemi

Manufacturer Part Number

SMUN5235DW1T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Arrays, Pre-Biased

Product Features and Performance

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA

Transistor Type: 2 NPN Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V

Resistor Base (R1): 2.2kOhms

Resistor Emitter Base (R2): 47kOhms

Product Advantages

Compact surface mount package

Pre-biased for easy implementation

Robust performance specifications

Key Technical Parameters

Power Max: 187mW

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA

Transistor Type: 2 NPN Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V

Resistor Base (R1): 2.2kOhms

Resistor Emitter Base (R2): 47kOhms

Quality and Safety Features

RoHS3 Compliant

Compatibility

Manufacturer's packaging: SC-88/SC70-6/SOT-363

Package / Case: 6-TSSOP, SC-88, SOT-363

Supplier Device Package: SC-88/SC70-6/SOT-363

Package: Tape & Reel (TR)

Application Areas

Suitable for a wide range of electronic circuit applications

Product Lifecycle

Current product, no indication of discontinuation

Several Key Reasons to Choose This Product

Compact surface mount package for space-constrained designs

Pre-biased for easy implementation in circuits

Robust performance specifications covering voltage, current, and gain

RoHS3 compliant for use in environmentally-conscious applications

Availability in common surface mount packaging options