Manufacturer Part Number
SMUN5313DW1T3G
Manufacturer
onsemi
Introduction
Dual pre-biased bipolar junction transistor (BJT) array
Product Features and Performance
1 NPN and 1 PNP pre-biased transistors
Low saturation voltage
High DC current gain
Low collector-emitter leakage current
Low base-emitter voltage
Small package size
Product Advantages
Compact design
Improved efficiency
Reduced power consumption
Enhanced reliability
Key Technical Parameters
Power rating: 187mW
Collector-emitter breakdown voltage: 50V
Collector current: 100mA
Collector cutoff current: 500nA
Collector-emitter saturation voltage: 250mV
DC current gain: 80 (min)
Base resistor: 47kΩ
Emitter-base resistor: 47kΩ
Quality and Safety Features
RoHS compliant
Reliable construction
Compatibility
Surface mount package: SC-88/SC70-6/SOT-363
Application Areas
Switching circuits
Logic gates
Amplifier circuits
Biasing circuits
Product Lifecycle
Current product
Replacement and upgrade options available
Key Reasons to Choose This Product
Compact size for space-constrained designs
High efficiency and low power consumption
Enhanced reliability and long lifespan
Compatibility with common surface mount packages
Suitable for a wide range of electronic circuit applications