SMUN5312DW1T1G - onsemi

Manufacturer Part Number

SMUN5312DW1T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Arrays, Pre-Biased

Product Features and Performance

RoHS3 Compliant

Manufacturer's packaging: SC-88/SC70-6/SOT-363

Base Product Number: SMUN5312

Package / Case: 6-TSSOP, SC-88, SOT-363

Supplier Device Package: SC-88/SC70-6/SOT-363

Package: Tape & Reel (TR)

Power Max: 187mW

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Current Collector Cutoff (Max): 500nA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA

Transistor Type: 1 NPN, 1 PNP Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V

Resistor Base (R1): 22kOhms

Resistor Emitter Base (R2): 22kOhms

Mounting Type: Surface Mount

Product Advantages

RoHS3 Compliant

Dual transistor design with pre-biased configuration

Small, surface mount package options

Key Technical Parameters

Power Max: 187mW

Voltage Collector Emitter Breakdown (Max): 50V

Current Collector (Ic) (Max): 100mA

Vce Saturation (Max) @ Ib, Ic: 250mV @ 300A, 10mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface mount package options

Application Areas

Discrete semiconductor applications requiring a pre-biased dual transistor configuration

Product Lifecycle

Current product, no known plans for discontinuation

Replacement and upgrade options available

Several Key Reasons to Choose This Product

RoHS3 compliant

Dual transistor design with pre-biased configuration

Small, surface mount package options

Suitable for a variety of discrete semiconductor applications

Ongoing product availability and upgrade options