Manufacturer Part Number
SMUN5311DW1T1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Transistor Array
Bipolar Junction Transistor (BJT) Array, Pre-Biased
Product Features and Performance
Dual NPN and PNP transistors
Low Collector-Emitter Saturation Voltage
High DC Current Gain
High Collector-Emitter Breakdown Voltage
Suitable for Automotive and Industrial Applications
Product Advantages
Compact Surface Mount Package
Pre-Biased Transistor Pair
Meets AEC-Q101 Automotive Qualification
Key Technical Parameters
Power Rating: 250mW
Collector-Emitter Breakdown Voltage: 50V
Collector Current (Max): 100mA
Collector Cutoff Current (Max): 500nA
Collector-Emitter Saturation Voltage: 250mV @ 10mA, 300μA
Quality and Safety Features
RoHS3 Compliant
Automotive Grade (AEC-Q101)
Compatibility
SC-88/SC70-6/SOT-363 Package
Tape & Reel Packaging
Application Areas
Automotive Electronics
Industrial Control Systems
Logic Level Switching
Analog Signal Conditioning
Product Lifecycle
Currently in Production
Replacement/Upgrade Options Available
Key Reasons to Choose
Compact Footprint
High Performance Transistor Pair
Automotive and Industrial Grade Quality
Easy Integration into Designs
Reliable and Long-Lasting