SMUN5233T1G - onsemi

Manufacturer Part Number

SMUN5233T1G

Manufacturer

onsemi

Introduction

Pre-biased NPN bipolar junction transistor (BJT)

Designed for general-purpose switching and amplification applications

Product Features and Performance

High DC current gain (hFE) of 80 minimum at 5 mA, 10 V

Low collector-emitter saturation voltage (VCE(sat)) of 250 mV maximum at 1 mA, 10 mA

Low collector cutoff current (ICBO) of 500 nA maximum

Power dissipation of 202 mW maximum

Collector-emitter breakdown voltage (BVCEO) of 50 V maximum

Product Advantages

Pre-biased design simplifies circuit design

Compact SC-70 surface-mount package

RoHS3 compliant

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 50 V

Current Collector (Ic) (Max): 100 mA

Current Collector Cutoff (Max): 500 nA

Vce Saturation (Max) @ Ib, Ic: 250 mV @ 1 mA, 10 mA

DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V

Resistor Base (R1): 4.7 kOhms

Resistor Emitter Base (R2): 47 kOhms

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount SC-70 (SOT-323) package

Application Areas

General-purpose switching and amplification applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacements or upgrades may be available in the future, but no specific information is provided.

Key Reasons to Choose This Product

Pre-biased design simplifies circuit design

High DC current gain for efficient amplification

Low saturation voltage for low power consumption

Compact surface-mount package for space-constrained designs

RoHS3 compliance for environmentally friendly use