Manufacturer Part Number
SMUN5233T1G
Manufacturer
onsemi
Introduction
Pre-biased NPN bipolar junction transistor (BJT)
Designed for general-purpose switching and amplification applications
Product Features and Performance
High DC current gain (hFE) of 80 minimum at 5 mA, 10 V
Low collector-emitter saturation voltage (VCE(sat)) of 250 mV maximum at 1 mA, 10 mA
Low collector cutoff current (ICBO) of 500 nA maximum
Power dissipation of 202 mW maximum
Collector-emitter breakdown voltage (BVCEO) of 50 V maximum
Product Advantages
Pre-biased design simplifies circuit design
Compact SC-70 surface-mount package
RoHS3 compliant
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 50 V
Current Collector (Ic) (Max): 100 mA
Current Collector Cutoff (Max): 500 nA
Vce Saturation (Max) @ Ib, Ic: 250 mV @ 1 mA, 10 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5 mA, 10 V
Resistor Base (R1): 4.7 kOhms
Resistor Emitter Base (R2): 47 kOhms
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount SC-70 (SOT-323) package
Application Areas
General-purpose switching and amplification applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements or upgrades may be available in the future, but no specific information is provided.
Key Reasons to Choose This Product
Pre-biased design simplifies circuit design
High DC current gain for efficient amplification
Low saturation voltage for low power consumption
Compact surface-mount package for space-constrained designs
RoHS3 compliance for environmentally friendly use