SMUN5213T1G - onsemi

Manufacturer Part Number

SMUN5213T1G

Manufacturer

onsemi

Introduction

The SMUN5213T1G is a pre-biased NPN bipolar junction transistor (BJT) in a small outline transistor (SOT) package.

Product Features and Performance

Automotive-grade AEC-Q101 qualified

Pre-biased for ease of use

Low collector-emitter saturation voltage

High current gain

Low collector cutoff current

Low power dissipation

Product Advantages

Suitable for automotive and industrial applications

Reliable performance under harsh conditions

Easy to integrate into circuit designs

Compact and space-saving package

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

DC Current Gain (hFE): 80 (min)

Base Resistor (R1): 47kΩ

Emitter-Base Resistor (R2): 47kΩ

Power Dissipation: 202mW

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive use

Reliable and durable construction

Compatibility

Surface mount (SMD) package

Compatible with standard SMT assembly processes

Application Areas

Automotive electronics

Industrial control systems

Power supplies

Switching circuits

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades available

Several Key Reasons to Choose This Product

Automotive-grade reliability and performance

Easy to use pre-biased design

Compact and space-saving package

Excellent electrical characteristics for a wide range of applications

Compliance with RoHS3 and AEC-Q101 standards