SMUN5212T1G - onsemi

Manufacturer Part Number

SMUN5212T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

NPN Bipolar Junction Transistor (BJT), Pre-Biased

Product Features and Performance

High current and voltage capabilities

Low collector-emitter saturation voltage

High DC current gain

Integrated base and emitter resistors

Product Advantages

Efficient and reliable performance

Reduced component count

Simplified circuit design

Key Technical Parameters

Power Rating: 202 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current (Max): 100 mA

Collector Cutoff Current (Max): 500 nA

Collector-Emitter Saturation Voltage: 250 mV @ 10 mA

DC Current Gain: 60 @ 5 mA, 10 V

Base and Emitter Resistors: 22 kΩ

Quality and Safety Features

RoHS3 Compliant

Suitable for surface mount applications

Compatibility

Can be used in various electronic circuits and applications

Application Areas

Amplifiers

Switches

Logic gates

Pull-up/Pull-down circuits

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgraded products may be available in the future.

Key Reasons to Choose This Product

Efficient and reliable performance with high current and voltage capabilities

Integrated base and emitter resistors simplify circuit design

Low collector-emitter saturation voltage for improved energy efficiency

High DC current gain for enhanced amplification and switching capabilities

RoHS3 compliance for environmentally-friendly applications