Manufacturer Part Number
SIA456DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode power MOSFET in a PowerPAK SC-70-6 package
Product Features and Performance
200V drain-to-source voltage
6A continuous drain current at 25°C
38Ω maximum on-resistance at 750mA, 4.5V
350pF maximum input capacitance at 100V
5W maximum power dissipation at Ta, 19W at Tc
-55°C to 150°C operating temperature range
Product Advantages
Compact PowerPAK SC-70-6 surface mount package
Low on-resistance for improved efficiency
High current handling capability
Wide operating temperature range
Key Technical Parameters
MOSFET technology
N-channel enhancement-mode
±16V maximum gate-to-source voltage
4V maximum gate threshold voltage at 250μA
8V to 4.5V drive voltage range
5nC maximum gate charge at 10V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging
Compatibility
Compatible with various electronic circuits and systems requiring a high-performance N-channel power MOSFET
Application Areas
Switching power supplies
Motor controls
Automotive electronics
Industrial automation
General purpose power switching
Product Lifecycle
Currently in production, no plans for discontinuation. Replacements and upgrades may be available.
Key Reasons to Choose This Product
Compact and space-saving package
Low on-resistance for improved efficiency
High current handling capability
Wide operating temperature range
Compliance with RoHS3 regulations
Tape and reel packaging for automated assembly
SIA4528-100KDelta Controls