Manufacturer Part Number
SIA448DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET in PowerPAK SC-70-6 package
Product Features and Performance
Trench MOSFET technology
Low on-resistance
Fast switching speed
Low gate charge
Low input capacitance
Wide operating temperature range (-55°C to 150°C)
High current handling capability (12A continuous drain current)
Low power dissipation (3.5W at Ta, 19.2W at Tc)
Product Advantages
Efficient power conversion and control
Compact and space-saving design
Reliable and durable performance
Suitable for a wide range of applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs Max): ±8V
On-Resistance (Rds(on) Max): 15mΩ @ 12.4A, 4.5V
Input Capacitance (Ciss Max): 1380pF @ 1V
Gate Charge (Qg Max): 35nC @ 8V
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Designed for safe and efficient operation
Compatibility
Suitable for use in a variety of power management and control applications
Application Areas
Switching power supplies
Motor drives
Power amplifiers
Industrial and automotive electronics
Product Lifecycle
Currently in active production
Replacement or upgrade options available
Key Reasons to Choose This Product
High performance and efficiency
Low on-resistance and fast switching speed
Compact and space-saving design
Wide operating temperature range
Reliable and durable construction
Suitable for a wide range of power management and control applications
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