SIA459EDJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA459EDJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product, Transistors - FETs, MOSFETs - Single

Product Features and Performance

RoHS3 Compliant

PowerPAK SC-70-6 Package

TrenchFET Series

P-Channel MOSFET

Operating Temperature: -50°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): ±12V

Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V

Current Continuous Drain (Id) @ 25°C: 9A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V

Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)

Vgs(th) (Max) @ Id: 1.2V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V

Product Advantages

RoHS3 Compliant

Compact PowerPAK SC-70-6 Package

Wide Operating Temperature Range

Low On-Resistance

Key Technical Parameters

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): ±12V

Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V

Current Continuous Drain (Id) @ 25°C: 9A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 10 V

Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc)

Vgs(th) (Max) @ Id: 1.2V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount

Application Areas

Power Management

Switch Mode Power Supplies

Motor Drives

Battery Charging

General Purpose Switching

Product Lifecycle

Current Product

Replacements and Upgrades Available

Key Reasons to Choose

RoHS3 Compliant

Compact PowerPAK SC-70-6 Package

Wide Operating Temperature Range

Low On-Resistance

High Current Capability

Suitable for a Variety of Power Applications