Manufacturer Part Number
SIA469DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel enhancement-mode power MOSFET in a PowerPAK SC-70-6 package.
Product Features and Performance
P-channel enhancement-mode power MOSFET
30 V Drain-Source Voltage (Vdss)
5 mΩ maximum on-resistance (Rds(on)) at 5 A, 10 V
12 A continuous drain current (Id) at 25°C
1020 pF maximum input capacitance (Ciss) at 15 V
6 W maximum power dissipation at 25°C
Product Advantages
Compact PowerPAK SC-70-6 package
Low on-resistance for high efficiency
High current capability
Suitable for high-frequency switching applications
Key Technical Parameters
Vds: 30 V
Vgs (Max): ±20 V
Rds(on) (Max): 26.5 mΩ at 5 A, 10 V
Id (Tc): 12 A at 25°C
Ciss (Max): 1020 pF at 15 V
Power Dissipation (Max): 15.6 W at 25°C
Quality and Safety Features
RoHS3 compliant
Qualified for automotive and industrial applications
Compatibility
Compatible with TrenchFET Gen III technology
Suitable for surface mount applications
Application Areas
Switching power supplies
Motor drives
Power management circuits
Battery chargers
Automotive electronics
Product Lifecycle
Currently in production
No discontinuation or replacement plans known
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power conversion
Compact PowerPAK SC-70-6 package for space-constrained designs
Suitable for high-frequency switching applications
RoHS3 compliance for use in a wide range of applications
Proven reliability and performance of Vishay / Siliconix TrenchFET technology