Manufacturer Part Number
SIA466EDJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel TrenchFET Power MOSFET
Product Features and Performance
20V Drain-Source Voltage
5mOhm Typical On-Resistance
25A Continuous Drain Current
Wide Operating Temperature Range: -55°C to 150°C
Low Gate Charge: 20nC
High Power Dissipation: 19.2W (Tc)
Product Advantages
Efficient power conversion with low on-resistance
Compact and optimized for space-constrained designs
Reliable performance across wide temperature range
Key Technical Parameters
Voltage Rating (Vds): 20V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.5mOhm
Drain Current (Id): 25A
Input Capacitance (Ciss): 620pF
Power Dissipation: 19.2W (Tc)
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Designed for surface mount assembly
Application Areas
Power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Current product offering
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent efficiency with low on-resistance
Compact and optimized for space-constrained designs
Wide operating temperature range for reliable performance
High power handling capability
Suitable for various power conversion applications