Manufacturer Part Number
SIA483DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET MOSFET transistor with low on-resistance and high current handling capability.
Product Features and Performance
Low on-resistance (RDS(on) = 21 mΩ @ 5 A, 10 V)
High continuous drain current (12 A @ 25°C)
Wide operating temperature range (-55°C to 150°C)
Fast switching speed
Low input capacitance (1550 pF @ 15 V)
Low gate charge (45 nC @ 10 V)
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Wide temperature range for reliable operation
Fast switching for high-speed applications
Small package size for compact designs
Key Technical Parameters
Drain-to-Source Voltage (VDS): 30 V
Gate-to-Source Voltage (VGS): ±20 V
Continuous Drain Current (ID): 12 A @ 25°C
On-Resistance (RDS(on)): 21 mΩ @ 5 A, 10 V
Input Capacitance (Ciss): 1550 pF @ 15 V
Power Dissipation (PD): 3.5 W (Ta), 19 W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Directly compatible with existing designs using similar P-channel MOSFET transistors
Application Areas
Power management circuits
Motor control
Switching power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent power efficiency and high current handling capability
Wide operating temperature range for reliable performance
Fast switching speed for high-speed applications
Small package size for compact designs
Proven reliability and quality from Vishay/Siliconix