SIA477EDJT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA477EDJT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel TrenchFET® Gen III MOSFET in a PowerPAK SC-70-6 single package.

Product Features and Performance

P-channel MOSFET with low on-resistance

High-speed switching

Low gate charge for improved efficiency

Suitable for high-frequency, high-power and high-efficiency applications

Product Advantages

Compact and space-saving package

High power density

Excellent thermal management

Reliable performance

Key Technical Parameters

Drain to Source Voltage (Vdss): 12 V

Gate to Source Voltage (Vgs Max): ±8 V

On-resistance (Rds(on) Max): 13 mΩ @ 5 A, 4.5 V

Drain Current (Id Continuous @ 25°C): 12 A

Input Capacitance (Ciss Max): 3050 pF @ 6 V

Power Dissipation (Max): 19 W

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Designed for high-temperature operation (-55°C to 150°C)

Compatibility

Suitable for a variety of high-frequency, high-power and high-efficiency applications

Application Areas

Switch-mode power supplies

DC-DC converters

Motor drives

Lighting and display systems

Industrial and consumer electronics

Product Lifecycle

This product is an active and currently available TrenchFET Gen III MOSFET

Replacement or upgraded models may become available in the future as technology advances

Key Reasons to Choose This Product

Excellent performance with low on-resistance and high-speed switching

Compact and space-saving PowerPAK SC-70-6 package

High power density and excellent thermal management

Reliable and durable construction for high-temperature operation

Suitable for a wide range of high-frequency, high-power and high-efficiency applications