SIA477EDJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA477EDJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SIA477EDJ-T1-GE3 is a P-channel TrenchFET MOSFET from Vishay/Siliconix. It is designed for use in a variety of power management and control applications.

Product Features and Performance

Low on-resistance (RDS(on)) of 14 mΩ at 7 A, 4.5 V

High current capability of 12 A (Tc)

Fast switching speed

Low gate charge of 87 nC at 8 V

Wide operating temperature range of -55°C to 150°C (TJ)

Product Advantages

Excellent power efficiency due to low RDS(on)

Compact size and surface mount packaging for space-saving designs

Suitable for a wide range of power management and control applications

Key Technical Parameters

Drain to Source Voltage (VDS): 12 V

Continuous Drain Current (ID): 12 A (Tc)

Input Capacitance (Ciss): 2970 pF at 6 V

Threshold Voltage (VGS(th)): 1 V at 250 μA

Quality and Safety Features

RoHS3 compliant

Manufactured in a controlled environment to ensure consistent quality

Compatibility

This MOSFET is compatible with a wide range of electronic devices and power management systems.

Application Areas

Power supplies

Motor drives

Switching regulators

Battery chargers

Portable electronics

Product Lifecycle

The SIA477EDJ-T1-GE3 is an active and in-production part. Vishay/Siliconix continues to offer this model and provide support for it.

Key Reasons to Choose This Product

Excellent power efficiency and performance due to low RDS(on)

Compact and space-saving surface mount package

Wide operating temperature range for diverse applications

Consistent quality and reliability backed by Vishay/Siliconix