SIA517DJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA517DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SIA517DJ-T1-GE3 is a dual N-channel and P-channel MOSFET transistor from Vishay / Siliconix. It is part of the TrenchFET series and is designed for a wide range of power management and switching applications.

Product Features and Performance

Dual N-channel and P-channel configuration

12V Drain to Source Voltage (Vdss)

29mOhm Max Rds On @ 5A, 4.5V

5A Continuous Drain Current (Id) @ 25°C

500pF Max Input Capacitance (Ciss) @ 6V

Logic Level Gate with 1V Max Vgs(th) @ 250A

15nC Max Gate Charge (Qg) @ 8V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Efficient power management due to low on-resistance

High current handling capability

Small PowerPAK SC-70-6 Dual package for compact designs

Logic level gate for easy interface with control circuitry

Key Technical Parameters

Drain to Source Voltage (Vdss): 12V

Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V

Current Continuous Drain (Id) @ 25°C: 4.5A

Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 6V

Vgs(th) (Max) @ Id: 1V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V

Quality and Safety Features

ROHS3 compliant

Suitable for a wide range of operating temperatures (-55°C to 150°C)

Compatibility

Surface mount package for easy integration into PCB designs

Application Areas

Power management circuits

Switching applications

Automotive electronics

Industrial control systems

Product Lifecycle

Currently available

No information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

Efficient power management due to low on-resistance

High current handling capability

Small package size for compact designs

Logic level gate for easy interface with control circuitry

Wide operating temperature range

ROHS3 compliance for environmental safety