Manufacturer Part Number
SIA527DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Dual N and P-Channel enhancement mode MOSFET transistor in a PowerPAK SC-70-6 package.
Product Features and Performance
Trench MOSFET technology
Low on-resistance
Low gate charge
Wide temperature range (-55°C to 150°C)
High power handling (7.8W)
Suitable for high-speed switching applications
Product Advantages
Compact and space-saving package
Efficient heat dissipation
Reliable performance in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
On-Resistance (Rds(on)): 29mOhm @ 5A, 4.5V
Continuous Drain Current (Id): 4.5A
Input Capacitance (Ciss): 500pF @ 6V
Gate Threshold Voltage (Vgs(th)): 1V @ 250A
Gate Charge (Qg): 15nC @ 8V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Switching power supplies
DC-DC converters
Motor control
Lighting control
General-purpose power management
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance characteristics (low on-resistance, low gate charge, high power handling)
Compact and efficient package design
Wide operating temperature range
Reliable and robust performance
Suitable for a variety of power management and control applications