Manufacturer Part Number
SIA461DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SIA461DJ-T1-GE3 is a P-channel enhancement-mode power MOSFET with industry-leading performance in a small PowerPAK SC-70-6 package.
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
Low on-resistance (RDS(ON)) of 33 mΩ @ 5.2 A, 4.5 V
High continuous drain current (ID) of 12 A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance (Ciss) of 1300 pF @ 10 V
Low gate charge (Qg) of 45 nC @ 8 V
Product Advantages
Excellent performance in a compact package
Suitable for high-power, high-efficiency applications
Efficient power management and heat dissipation
Key Technical Parameters
Drain to Source Voltage (VDS): 20 V
Gate to Source Voltage (VGS): ±8 V
Power Dissipation (PD): 3.4 W (Ta), 17.9 W (Tc)
Threshold Voltage (VGS(th)): 1 V @ 250 A
Drive Voltage (Max RDS(ON), Min RDS(ON)): 1.8 V, 4.5 V
Quality and Safety Features
RoHS3 compliant
Suitable for reflow soldering
Compatibility
Designed for surface mount applications
Application Areas
Power management circuits
Switching power supplies
Motor drives
Battery chargers
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Optimal power efficiency and heat dissipation
Suitable for a wide range of high-power, high-efficiency applications
Reliable and RoHS3 compliant
Compact and easy to integrate into designs