Manufacturer Part Number
SIA449DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
P-Channel TrenchFET MOSFET
Product Features and Performance
Very low on-resistance
High current capability
Fast switching speed
Suitable for high-frequency switching applications
Product Advantages
Compact surface-mount package
Excellent thermal performance
High efficiency and reliability
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12 V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 6 A, 10 V
Current Continuous Drain (Id) @ 25°C: 12 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V
Power Dissipation (Max): 3.5 W (Ta), 19 W (Tc)
Vgs(th) (Max) @ Id: 1.5 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 2.5 V, 10 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Switching power supplies
Motor drives
Power management circuits
Wireless communication equipment
Industrial electronics
Product Lifecycle
Current product, no discontinuation or replacement plans
Several Key Reasons to Choose This Product
Excellent performance characteristics, including very low on-resistance, high current capability, and fast switching speed
Compact surface-mount package for efficient use of board space
Exceptional thermal performance and reliability
Suitable for a wide range of high-frequency switching applications
RoHS3 compliance for environmentally-friendly use
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