SIA449DJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA449DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

P-Channel TrenchFET MOSFET

Product Features and Performance

Very low on-resistance

High current capability

Fast switching speed

Suitable for high-frequency switching applications

Product Advantages

Compact surface-mount package

Excellent thermal performance

High efficiency and reliability

Key Technical Parameters

Drain to Source Voltage (Vdss): 30 V

Vgs (Max): ±12 V

Rds On (Max) @ Id, Vgs: 20 mOhm @ 6 A, 10 V

Current Continuous Drain (Id) @ 25°C: 12 A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 15 V

Power Dissipation (Max): 3.5 W (Ta), 19 W (Tc)

Vgs(th) (Max) @ Id: 1.5 V @ 250 A

Drive Voltage (Max Rds On, Min Rds On): 2.5 V, 10 V

Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with various electronic circuits and systems

Application Areas

Switching power supplies

Motor drives

Power management circuits

Wireless communication equipment

Industrial electronics

Product Lifecycle

Current product, no discontinuation or replacement plans

Several Key Reasons to Choose This Product

Excellent performance characteristics, including very low on-resistance, high current capability, and fast switching speed

Compact surface-mount package for efficient use of board space

Exceptional thermal performance and reliability

Suitable for a wide range of high-frequency switching applications

RoHS3 compliance for environmentally-friendly use