Manufacturer Part Number
SIA446DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Power MOSFET transistor with ThunderFET technology for high-performance power switching applications.
Product Features and Performance
N-Channel MOSFET
High voltage (150V) and low on-resistance (177mΩ)
High continuous drain current (7.7A at 25°C)
Low input capacitance (230pF) and gate charge (8nC)
Wide operating temperature range (-55°C to 150°C)
Suitable for high-frequency switching applications
Product Advantages
Excellent power efficiency and thermal performance
Reliable and robust design for demanding applications
Compact PowerPAK SC-70-6 surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 177mΩ @ 3A, 10V
Continuous Drain Current (Id): 7.7A (at 25°C)
Input Capacitance (Ciss): 230pF @ 75V
Power Dissipation: 3.5W (at Ta), 19W (at Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of power switching applications, such as power supplies, motor drivers, and power inverters.
Application Areas
Power supplies
Motor drives
Power inverters
Switching regulators
General-purpose power switching
Product Lifecycle
This product is currently in production and available.
Vishay continues to offer support and availability for this device.
Upgrades or replacements may become available in the future as technology evolves.
Key Reasons to Choose This Product
High efficiency and thermal performance for improved system reliability
Robust and reliable design for demanding applications
Compact package size and ease of integration
Suitable for high-frequency switching applications
Ongoing manufacturer support and availability