SIA437DJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA437DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

The SIA437DJ-T1-GE3 is a P-channel MOSFET transistor from the TrenchFET series, designed for a wide range of power management and control applications.

Product Features and Performance

20V Drain-to-Source Voltage (Vdss)

5mΩ Maximum On-Resistance (Rds(on)) at 8A, 4.5V

7A Continuous Drain Current (Id) at 25°C case temperature

2340pF Maximum Input Capacitance (Ciss) at 10V

5W Power Dissipation at 25°C ambient temperature, 19W at 25°C case temperature

-50°C to 150°C Operating Temperature Range

Product Advantages

Efficient power management with low on-resistance

High current handling capability

Compact PowerPAK SC-70-6 surface mount package

RoHS-3 compliant

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 20V

Gate-to-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 14.5mΩ @ 8A, 4.5V

Continuous Drain Current (Id): 29.7A @ 25°C

Input Capacitance (Ciss): 2340pF @ 10V

Power Dissipation: 3.5W @ 25°C ambient, 19W @ 25°C case

Quality and Safety Features

MOSFET technology for reliable performance

RoHS-3 compliant for environmental responsibility

Compatibility

Compatible with a wide range of power management and control applications

Application Areas

Power management circuits

Motor drives

Battery charging systems

Switching power supplies

Product Lifecycle

Currently in production

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

Efficient power management with low on-resistance

High current handling capability

Compact surface mount package

Wide operating temperature range

RoHS-3 compliance for environmental responsibility