Manufacturer Part Number
SIA433EDJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
PowerPAK SC-70-6 package
TrenchFET series
Tape & Reel (TR) package
Operating temperature range: -55°C to 150°C
Drain to Source Voltage (Vdss): 20V
Maximum Gate-Source Voltage (Vgs): ±12V
Maximum On-State Resistance (Rds(on)): 18mΩ @ 7.6A, 4.5V
MOSFET (Metal Oxide) technology
Continuous Drain Current (Id): 12A @ 25°C
Maximum Power Dissipation: 3.5W (Ta), 19W (Tc)
P-Channel FET type
Maximum Threshold Voltage (Vgs(th)): 1.2V @ 250A
Drive Voltage: 1.8V (Max Rds(on)), 4.5V (Min Rds(on))
Maximum Gate Charge (Qg): 75nC @ 8V
Product Advantages
High current handling capability
Low on-state resistance
Wide operating temperature range
Compact PowerPAK SC-70-6 package
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
Maximum Gate-Source Voltage (Vgs): ±12V
On-State Resistance (Rds(on)): 18mΩ @ 7.6A, 4.5V
Continuous Drain Current (Id): 12A @ 25°C
Maximum Power Dissipation: 3.5W (Ta), 19W (Tc)
Threshold Voltage (Vgs(th)): 1.2V @ 250A
Gate Charge (Qg): 75nC @ 8V
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package
Application Areas
Suitable for a variety of power management and control applications
Product Lifecycle
Current product, no discontinuation information available
Replacements or upgrades may be available from Vishay/Siliconix
Key Reasons to Choose This Product
High current handling capability
Low on-state resistance
Wide operating temperature range
Compact PowerPAK SC-70-6 package
RoHS3 compliance
Suitable for various power management and control applications
SIA431DJElectro-Films (EFI) / Vishay