Manufacturer Part Number
SIA432DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products: Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
30V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
20mOhm Rds On (Max) @ 6A, 10V
12A Continuous Drain Current (Id) @ 25°C
800pF Input Capacitance (Ciss) (Max) @ 15V
5W Power Dissipation (Max) @ Ta, 19.2W @ Tc
20nC Gate Charge (Qg) (Max) @ 10V
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power switching
High current handling capability
Compact PowerPAK SC-70-6 surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs): ±20V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Continuous Drain Current (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Power Dissipation (Max): 3.5W @ Ta, 19.2W @ Tc
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Quality and Safety Features
ROHS3 Compliant
Suitable for safety-critical applications
Compatibility
Compatible with various electronic devices and systems that require efficient power switching
Application Areas
Power supplies
Motor drives
Switching circuits
Power amplifiers
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Efficient power switching due to low on-resistance
High current handling capability
Compact surface mount package
Suitable for a wide range of applications
Compliant with safety and environmental standards
SIA431DJElectro-Films (EFI) / Vishay