SIA432DJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA432DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products: Transistors - FETs, MOSFETs - Single

Product Features and Performance

N-Channel MOSFET

30V Drain to Source Voltage (Vdss)

±20V Gate to Source Voltage (Vgs)

20mOhm Rds On (Max) @ 6A, 10V

12A Continuous Drain Current (Id) @ 25°C

800pF Input Capacitance (Ciss) (Max) @ 15V

5W Power Dissipation (Max) @ Ta, 19.2W @ Tc

20nC Gate Charge (Qg) (Max) @ 10V

-55°C to 150°C Operating Temperature Range

Product Advantages

Low on-resistance for efficient power switching

High current handling capability

Compact PowerPAK SC-70-6 surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Gate to Source Voltage (Vgs): ±20V

Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V

Continuous Drain Current (Id) @ 25°C: 12A

Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V

Power Dissipation (Max): 3.5W @ Ta, 19.2W @ Tc

Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V

Quality and Safety Features

ROHS3 Compliant

Suitable for safety-critical applications

Compatibility

Compatible with various electronic devices and systems that require efficient power switching

Application Areas

Power supplies

Motor drives

Switching circuits

Power amplifiers

Product Lifecycle

Current product offering

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Efficient power switching due to low on-resistance

High current handling capability

Compact surface mount package

Suitable for a wide range of applications

Compliant with safety and environmental standards