SIA436DJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA436DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

N-Channel MOSFET Transistor

Product Features and Performance

TrenchFET Series

PowerPAK SC-70-6 Package

Low On-Resistance (Rds(on))

High Continuous Drain Current (Id)

Wide Operating Temperature Range (-55°C to 150°C)

Low Input Capacitance (Ciss)

Low Gate Charge (Qg)

Product Advantages

Efficient Power Switching

Compact and Space-Saving Design

Reliable Operation in Harsh Environments

Key Technical Parameters

Drain to Source Voltage (Vdss): 8V

Gate to Source Voltage (Vgs): ±5V

Rds(on) @ Id, Vgs: 9.4mOhm @ 15.7A, 4.5V

Continuous Drain Current (Id) @ 25°C: 12A

Input Capacitance (Ciss) @ Vds: 1508pF @ 4V

Power Dissipation (Max): 3.5W (Ta), 19W (Tc)

Gate Charge (Qg) @ Vgs: 25.2nC @ 5V

Quality and Safety Features

RoHS3 Compliant

Suitable for Surface Mount Assembly

Compatibility

Compatible with PowerPAK SC-70-6 Packages

Application Areas

Switching Power Supplies

Motor Drives

Power Management Circuits

Battery-Powered Devices

Product Lifecycle

Active and Available

Replacement or Upgrade Options May Be Available

Key Reasons to Choose This Product

Excellent Power Switching Performance

Compact and Space-Efficient Design

Wide Operating Temperature Range

Robust and Reliable Operation

Compatibility with Common Package Footprints