Manufacturer Part Number
SIA444DJT-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel enhancement-mode field-effect transistor (MOSFET) in a PowerPAK SC-70-6 package.
Product Features and Performance
Optimized for high-frequency, high-efficiency switching applications
Low on-resistance (RDS(on)) for low conduction losses
Fast switching speed and low gate charge for high-efficiency operation
High avalanche energy capability
Excellent thermal enhancement
Product Advantages
Compact and efficient power conversion
Improved system reliability and performance
Reduced power consumption and heat dissipation
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (RDS(on)): 17 mΩ @ 7.4 A, 10 V
Drain Current (ID): 12 A (Tc)
Input Capacitance (Ciss): 560 pF @ 15 V
Power Dissipation (Pd): 3.5 W (Ta), 19 W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of high-frequency, high-efficiency switching applications
Application Areas
Switching power supplies
DC-DC converters
Motor drives
Automotive electronics
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent performance and efficiency in switching applications
Compact and thermally-enhanced package for improved power density
Reliable and durable construction for long-term operation
Compatibility with a wide range of applications