Manufacturer Part Number
SIA430DJT-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel Power MOSFET Transistor
Product Features and Performance
High-performance N-channel power MOSFET
Optimized for high-frequency, high-efficiency power conversion applications
Low on-resistance for low conduction losses
Fast switching for high-frequency operation
High blocking voltage capability
Low gate charge for efficient switching
Product Advantages
Excellent power conversion efficiency
High power density
Reliable operation in harsh environments
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 13.5 mOhm @ 7 A, 10 V
Continuous Drain Current (Id): 12 A @ 25°C
Input Capacitance (Ciss): 800 pF @ 10 V
Power Dissipation (Pd): 19.2 W @ Tc
Threshold Voltage (Vgs(th)): 3 V @ 250 A
Drive Voltage (Vgs): 4.5 V (Max Rds(on)), 10 V (Min Rds(on))
Gate Charge (Qg): 18 nC @ 10 V
Quality and Safety Features
Reliable operation in temperatures from -55°C to 150°C
Compliant with RoHS and other environmental regulations
Compatibility
Compatible with various power conversion applications, including:
- Switching power supplies
- Inverters
- Motor drives
- Power amplifiers
Application Areas
High-frequency, high-efficiency power conversion
Industrial and consumer electronics
Automotive electronics
Telecommunications equipment
Product Lifecycle
This product is an active and widely used part in the industry.
Replacements and upgrades are readily available from Vishay/Siliconix and other manufacturers.
Key Reasons to Choose This Product
Excellent power conversion efficiency and high power density
Reliable operation in harsh environments
Fast switching and low gate charge for efficient switching
Robust design and compliance with safety and environmental regulations
Wide availability and compatibility with various power conversion applications
SIA431DJElectro-Films (EFI) / Vishay