SIA427ADJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA427ADJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

P-Channel MOSFET

Drain to Source Voltage (Vdss): 8V

Vgs (Max): ±5V

Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V

Current Continuous Drain (Id) @ 25°C: 12A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4V

Power Dissipation (Max): 19W (Tc)

Vgs(th) (Max) @ Id: 800mV @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5V

Product Advantages

Low on-resistance for high efficiency

High current handling capability

Fast switching for high-frequency applications

Key Technical Parameters

MOSFET Technology

PowerPAK SC-70-6 Package

Surface Mount Mounting Type

Operating Temperature: -55°C ~ 150°C (TJ)

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with a wide range of electronic circuits and applications

Application Areas

Suitable for high-frequency, high-efficiency power conversion and control applications

Product Lifecycle

Currently in production

Replacement or upgrade options may be available in the future

Several Key Reasons to Choose This Product

High performance and efficiency

Compact surface mount package

Broad operating temperature range

RoHS compliance for environmentally friendly applications