Manufacturer Part Number
SIA415DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This is a P-Channel MOSFET transistor from Vishay Siliconix's SIA415 series, designed for power management applications.
Product Features and Performance
TrenchFET technology for high efficiency and low on-resistance
Continuous drain current of 12A at 25°C case temperature
Drain-source voltage up to 20V
On-resistance as low as 35mOhm at 5.6A, 4.5V
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge
Product Advantages
High efficiency due to low on-resistance
Compact PowerPAK SC-70-6 surface mount package
Robust design for high reliability
Suitable for a wide range of power management applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 35mOhm
Continuous Drain Current (Id): 12A
Input Capacitance (Ciss): 1250pF
Power Dissipation: 3.5W (Ta), 19W (Tc)
Quality and Safety Features
RoHS3 compliant
Meets high-reliability quality standards
Compatibility
Compatible with various power management circuits and systems
Application Areas
Power supplies
Motor drives
Battery chargers
Voltage regulators
Industrial and automotive electronics
Product Lifecycle
This product is still in active production and widely available.
Replacement or upgrade options may be available from Vishay Siliconix or other manufacturers.
Key Reasons to Choose This Product
Excellent efficiency and power handling capability
Compact and reliable PowerPAK SC-70-6 package
Wide operating temperature range and robust design
Suitable for a variety of power management applications
Backed by Vishay Siliconix's reputation for quality and reliability