SIA413DJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA413DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance P-channel MOSFET with low on-resistance designed for power management and motor drive applications.

Product Features and Performance

Low on-resistance for high efficiency

High current handling capability up to 12A

Fast switching speed

Wide temperature range of -55°C to 150°C

Low gate charge for efficient switching

Compact PowerPAK SC-70-6 package

Product Advantages

Excellent thermal performance and power dissipation

Optimized for power management and motor control applications

Compact and space-saving package

Key Technical Parameters

Drain to Source Voltage (Vdss): 12V

Maximum Gate-Source Voltage (Vgs): ±8V

Maximum On-Resistance (Rds(on)): 29mΩ

Continuous Drain Current (Id): 12A

Input Capacitance (Ciss): 1800pF

Power Dissipation (Max): 3.5W (Ta), 19W (Tc)

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Compatible with a wide range of power management and motor drive applications

Application Areas

Power management

Motor control

Industrial electronics

Automotive electronics

Product Lifecycle

Currently in production

No indication of discontinuation

Replacement or upgrade products may be available

Key Reasons to Choose This Product

Excellent efficiency and power handling capability

Compact and space-saving package

Wide temperature range for reliable operation

Fast switching speed for high-performance applications

Well-suited for power management and motor control systems