Manufacturer Part Number
SIA400EDJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
N-Channel MOSFET
30V Drain to Source Voltage (Vdss)
±12V Gate to Source Voltage (Vgs)
19mOhm Rds On (Max) @ 11A, 4.5V
12A Continuous Drain Current (Id) @ 25°C (Tc)
1265 pF Input Capacitance (Ciss) (Max) @ 15V
2W Power Dissipation (Max) (Tc)
36 nC Gate Charge (Qg) (Max) @ 10V
-55°C to 150°C (TJ) Operating Temperature Range
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Compact PowerPAK SC-70-6 package
Key Technical Parameters
MOSFET Technology
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs Max): ±12V
Rds On (Max) @ Id, Vgs: 19mOhm @ 11A, 4.5V
Continuous Drain Current (Id) @ 25°C (Tc): 12A
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10V
Quality and Safety Features
RoHS3 Compliant
PowerPAK SC-70-6 package
Compatibility
Surface Mount
Application Areas
Power Management
Switching Power Supplies
Motor Drives
Industrial Electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent performance with low on-resistance for improved efficiency
High current handling capability for demanding applications
Compact and space-saving PowerPAK SC-70-6 package
Broad operating temperature range of -55°C to 150°C
RoHS3 compliance for environmental consideration