Manufacturer Part Number
SIA414DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
Surface mount package (PowerPAK SC-70-6)
Drain-to-Source Voltage (Vdss) of 8V
Maximum Gate-to-Source Voltage (Vgs) of ±5V
Low on-resistance (Rds(on)) of 11mΩ @ 9.7A, 4.5V
Continuous Drain Current (Id) of 12A @ 25°C
Input Capacitance (Ciss) of 1800pF @ 4V
Power Dissipation (Max) of 3.5W (Ta), 19W (Tc)
Operating Temperature Range of -55°C to 150°C
Product Advantages
High efficiency and low power loss
Compact surface mount package
Suitable for high-current, high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 8V
Gate-to-Source Voltage (Vgs): ±5V
On-resistance (Rds(on)): 11mΩ @ 9.7A, 4.5V
Continuous Drain Current (Id): 12A @ 25°C
Input Capacitance (Ciss): 1800pF @ 4V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Ideal for high-current, high-frequency applications such as:
- Power supplies
- Power management circuits
- Motor drives
- Switching regulators
Product Lifecycle
Currently available
Replacement or upgrade options may be available in the future
Several Key Reasons to Choose This Product
High efficiency and low power loss for improved energy savings
Compact surface mount package for space-constrained designs
Suitable for high-current, high-frequency applications
Reliable performance and RoHS3 compliance for safety and environmental considerations