SIA426DJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA426DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel TrenchFET MOSFET with low on-resistance and fast switching speed.

Product Features and Performance

Very low on-resistance of 23.6 mOhm at 9.9A, 10V

High current capability of 4.5A (Tc) continuous drain current

Fast switching speed

Low input capacitance of 1020 pF at 10V

Wide operating temperature range of -55°C to 150°C

High power dissipation of 3.5W (Ta) and 19W (Tc)

Product Advantages

Efficient power conversion

Compact and space-saving design

Reliable performance in harsh environments

Key Technical Parameters

Drain to Source Voltage (Vdss): 20V

Gate-Source Voltage (Vgs Max): ±12V

Threshold Voltage (Vgs(th) Max): 1.5V at 250A

On-Resistance (Rds(on) Max): 23.6 mOhm at 9.9A, 10V

Gate Charge (Qg Max): 27 nC at 10V

Quality and Safety Features

RoHS3 compliant

Suitable for use in safety-critical applications

Compatibility

Surface mount (PowerPAK SC-70-6 package)

Tape and reel packaging

Application Areas

Switching power supplies

Motor drives

Industrial automation

Telecommunications equipment

Consumer electronics

Product Lifecycle

Currently in active production

No known plans for discontinuation

Replacement or upgrade options available if needed

Key Reasons to Choose This Product

Excellent power efficiency due to very low on-resistance

Compact and space-saving design

Reliable operation in harsh environments

Suitable for a wide range of power electronics applications

Supported by a reputable manufacturer with a proven track record