SIA427DJ-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIA427DJ-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

P-Channel MOSFET

RoHS3 Compliant

PowerPAK SC-70-6 Package

TrenchFET Series

Drain to Source Voltage (Vdss): 8V

Vgs (Max): ±5V

Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V

Current Continuous Drain (Id) @ 25°C: 12A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4V

Power Dissipation (Max): 3.5W (Ta), 19W (Tc)

Vgs(th) (Max) @ Id: 800mV @ 250A

Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 5V

Operating Temperature: -55°C ~ 150°C (TJ)

Product Advantages

Low On-Resistance

High Current Handling Capability

Compact PowerPAK SC-70-6 Package

Suitable for High-Frequency and High-Efficiency Power Conversion Applications

Key Technical Parameters

Drain to Source Voltage (Vdss): 8V

Vgs (Max): ±5V

Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V

Current Continuous Drain (Id) @ 25°C: 12A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 4V

Power Dissipation (Max): 3.5W (Ta), 19W (Tc)

Quality and Safety Features

RoHS3 Compliant

Suitable for High-Reliability Applications

Compatibility

Suitable for Surface Mount Applications

Application Areas

High-Frequency and High-Efficiency Power Conversion Applications

Switch-Mode Power Supplies

DC-DC Converters

Class-D Audio Amplifiers

Motor Drives

Product Lifecycle

Currently in production

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

Low On-Resistance for High Efficiency

High Current Handling Capability

Compact PowerPAK SC-70-6 Package for Space-Constrained Designs

Suitable for High-Frequency and High-Efficiency Power Conversion Applications

RoHS3 Compliant for Environmental Compliance