Manufacturer Part Number
SIA429DJT-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel TrenchFET power MOSFET
Product Features and Performance
Low on-resistance
High current capability
Fast switching speed
Low gate charge
Low input capacitance
Wide temperature range: -55°C to 150°C
Product Advantages
Efficient power conversion
Improved system reliability
Reduced power losses
Compact design
Key Technical Parameters
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8 V
Rds On (Max) @ Id, Vgs: 20.5 mΩ @ 6 A, 4.5 V
Current Continuous Drain (Id) @ 25°C: 12 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 10 V
Power Dissipation (Max): 3.5 W (Ta), 19 W (Tc)
Vgs(th) (Max) @ Id: 1 V @ 250 A
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 8 V
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Suitable for a variety of power management applications
Application Areas
Power supplies
Inverters
Motor drives
Battery chargers
Lighting control
Product Lifecycle
Currently available
No discontinuation or replacement plans known
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
High current capability and fast switching speed
Compact design and wide temperature range
Improved system reliability and reduced power losses