Manufacturer Part Number
SIA421DJ-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single
Product Features and Performance
P-Channel MOSFET
30V Drain-Source Voltage
±20V Gate-Source Voltage
35mΩ On-Resistance @ 5.3A, 10V
12A Continuous Drain Current @ 25°C
950pF Input Capacitance @ 15V
5W Power Dissipation @ 25°C, 19W @ Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
High performance P-Channel MOSFET
Low on-resistance for efficient power switching
Wide operating temperature range
Surface mount package for compact design
Key Technical Parameters
Drain-Source Voltage: 30V
Gate-Source Voltage: ±20V
On-Resistance: 35mΩ
Continuous Drain Current: 12A
Input Capacitance: 950pF
Power Dissipation: 3.5W @ 25°C, 19W @ Tc
Quality and Safety Features
RoHS3 compliant
PowerPAK SC-70-6 package
Compatibility
Compatible with various electronic circuit designs requiring a high-performance P-Channel MOSFET
Application Areas
Power management circuits
Motor control
Switching power supplies
Battery chargers
Brushless DC motor drives
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades may be available in the future
Key Reasons to Choose this Product
Excellent performance with low on-resistance
Wide operating temperature range
Compact surface mount package
RoHS3 compliance for environmental safety
Proven reliability and quality from Vishay / Siliconix