Manufacturer Part Number
MRFE6VP5600HR6
Manufacturer
NXP Semiconductors
Introduction
High-performance LDMOS transistor for RF power amplifier applications
Product Features and Performance
600W output power
25dB gain
230MHz frequency
Dual configuration
LDMOS technology
Product Advantages
High power and efficiency
Excellent linearity
Robust and reliable
Key Technical Parameters
Output power: 600W
Current (test): 100mA
Voltage (rated): 130V
Voltage (test): 50V
Frequency: 230MHz
Quality and Safety Features
RoHS3 compliant
NI-1230-4H packaging
Compatibility
Suitable for use in RF power amplifier applications
Application Areas
Broadcast equipment
Wireless infrastructure
Industrial and scientific applications
Product Lifecycle
This product is an active, high-performance LDMOS transistor. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High output power and efficiency
Excellent linearity and reliability
Suitable for a wide range of RF power amplifier applications
RoHS3 compliance for environmental considerations